Hopping-Randomwalk in Random Fractal Fluctuation and the Application to Photoluminescence Decay in Amorphous Si : H and Nanometer Film

2002 ◽  
Vol 230 (1) ◽  
pp. 15-20 ◽  
Author(s):  
Y. Ando ◽  
A. Sasaki ◽  
M. Shingai ◽  
K. Murayama
Keyword(s):  
Random Fractal ◽  
Photoluminescence Decay ◽  
Amorphous Si ◽  
Fractal Fluctuation

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

High-angle electron scattering from amorphous silicon

1995 ◽  
Vol 53 ◽  
pp. 162-163
Author(s):  
M. Libera ◽  
J.A. Ott ◽  
K. Siangchaew ◽  
L. Tsung
Keyword(s):  
Electron Scattering ◽  
Amorphous Material ◽  
Structural Defects ◽  
Constant Thickness ◽  
High Angle ◽  
Fast Electrons ◽  
Angle Scattering ◽  
Stem Image ◽  
Amorphous Si ◽  
Thermal Vibrations

Channeling occurs when fast electrons follow atomic strings in a crystal where there is a minimum in the potential energy (1). Channeling has a strong effect on high-angle scattering. Deviations in atomic position along a channel due to structural defects or thermal vibrations increase the probability of scattering (2-5). Since there are no extended channels in an amorphous material the question arises: for a given material with constant thickness, will the high-angle scattering be higher from a crystal or a glass?Figure la shows a HAADF STEM image collected using a Philips CM20 FEG TEM/STEM with inner and outer collection angles of 35mrad and lOOmrad. The specimen (6) was a cross section of singlecrystal Si containing: amorphous Si (region A), defective Si containing many stacking faults (B), two coherent Ge layers (CI; C2), and a contamination layer (D). CBED patterns (fig. lb), PEELS spectra, and HAADF signals (fig. lc) were collected at 106K and 300K along the indicated line.

Amorphous Si/SiC phototransistors and avalanche photodiodes

1991 ◽  
Vol 138 (3) ◽  
pp. 226 ◽  
Author(s):  
C.Y. Chang ◽  
J.W. Hong ◽  
Y.K. Fang
Keyword(s):  
Avalanche Photodiodes ◽  
Amorphous Si

HIGH EFFICIENCY, LARGE-AREA PHOTOVOLTAIC DEVICES USING AMORPHOUS Si : F : H ALLOY

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-463-C4-466
Author(s):  
A. Madan ◽  
W. Czubatyj ◽  
J. Yang ◽  
J. McGill ◽  
S. R. Ovshinsky
Keyword(s):  
High Efficiency ◽  
Photovoltaic Devices ◽  
Large Area ◽  
Amorphous Si

Integrated low-temperature process for the fabrication of amorphous Si nanoparticles embedded in Al2 O3 for non-volatile memory application

2016 ◽  
Vol 213 (9) ◽  
pp. 2446-2451 ◽  
Author(s):  
Klemens Ilse ◽  
Thomas Schneider ◽  
Johannes Ziegler ◽  
Alexander Sprafke ◽  
Ralf B. Wehrspohn
Keyword(s):  
Low Temperature ◽  
Si Nanoparticles ◽  
Non Volatile Memory ◽  
Amorphous Si ◽  
Volatile Memory ◽  
Low Temperature Process

Nanostructured amorphous SiAu alloys — Structure and atomic correlations

1995 ◽  
Vol 32 (3) ◽  
pp. 295-306 ◽  
Author(s):  
A. Sturm ◽  
A. Wiedenmann ◽  
H. Wollenberger
Keyword(s):  
Amorphous Si

Reversible switching in bicontinuous structure for phase change random access memory application

Nanoscale ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 4678-4684
Author(s):  
Yan Cheng ◽  
Yonghui Zheng ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bicontinuous Structure ◽  
Amorphous Si

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.

Optical constants of rf sputtered hydrogenated amorphous Si

1979 ◽  
Vol 20 (2) ◽  
pp. 716-728 ◽  
Author(s):  
Eva C. Freeman ◽  
William Paul
Keyword(s):  
Optical Constants ◽  
Amorphous Si ◽  
Hydrogenated Amorphous
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